LNO thin films were prepared on Si (100) substrates by Sol Gel method, and then Ca0.4Sr0.6Bi4Ti4O15 thin films with LaNiO3 buffer layer on LaNiO3/Si (100) were prepared.The effect of pre annealed temperature,annealed temperature and thickness on resistivity and structure of LNO films was investigated.It was found that the low resistivity and high (110)-oriented LNO film made by decomposed at 350 ℃ and then annealed at 750 ℃ when the thickness was 250 nm.The Ca0.4Sr0.6Bi4Ti4O15 thin film sample exhibited higher A axis orientation.The relative remnantent polarization (Pr) and coercive field (Ec) of Ca0.4Sr0.6Bi4Ti4O15/LNO were 15.2 μC/cm2 and 70 kV/cm, respectively.