In traditional micromachined capacitive ultrasonic transducer (CMUT) fabrication process, the silicon nitride membrane is deposited by low pressure chemical vapor deposition(LPCVD)，which result in unpredictable mechanical properties and more residual stress in the membrane. Therefore a novel CMUT structure based on anodic bonding technology is designed . The transducer membrane and cavity are defined on an even thickness and low residual stress SOI wafer and glass wafer, respectively. A simplified analytical model is established to describe the mechanical properties of the structure. Finite element model in ANSYS is also conducted to verify the analytical model and evaluate the performance of the device. The collapse voltage is simulated by coupling analysis of electrostatic structure. Process flow is presented. The frequency of the structure is 1.48 MHz, sensitivity is 0.24 fF/Pa, collapse voltage is 70 V, range is 48 kPa.