流延法制备纳米SiO2压电陶瓷的结构及性能
作者:
作者单位:

作者简介:

通讯作者:

基金项目:

西安市科技计划基金资助项目(CXY1124(1))

伦理声明:



Research on the Structure and Piezoelectric Properties of Silica Piezoelectric Nano ceramic Prepared by Tape Casting Process
Author:
Ethical statement:

Affiliation:

Funding:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
    摘要:

    采用流延法使用无定型纳米SiO2原料粉制备SiO2压电陶瓷, XRD和SEM结果表明,烧结温度为850 ℃和950 ℃时未发生晶化反应,当烧结温度为1 050 ℃时生成 α 方石英,晶粒尺寸随烧结温度的升高而长大,不同烧结温度下压电常数分别为1.1 pC/N,1.2 pC/N和1.4 pC/N,烧结温度越高介电常数越大,机械品质因数越大,而介电损耗与烧结温度无关。

    Abstract:

    Silica nano ceramic was prepared by silica nanoparticle and tape casting process, The result of XRD and SEM showed that crystallization reaction did not happen when the sintering temperature was 850 ℃ or 950 ℃,however α-cristobalite was found at 1 050 ℃,the grain size was increasing along with the increment of sintering temperature, on the other hand the piezoelectric constant were 1.1 pC/N, 1.2 pC/N and 1.4 pC/N with the sintering temperature increased.The dielectric constant and mechanical quality factor were higher at higher sintering temperature, whereas the dielectric losses had no relation with the sintering temperature.

    参考文献
    相似文献
    引证文献
引用本文

卓磊,陈文革,张洋,辛菲,赵珊珊.流延法制备纳米SiO2压电陶瓷的结构及性能[J].压电与声光,2014,36(5):775-778. ZHUO Lei, CHEN Wenge, ZHANG Yang, XIN Fei, ZHAO Shanshan. Research on the Structure and Piezoelectric Properties of Silica Piezoelectric Nano ceramic Prepared by Tape Casting Process[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
历史
  • 收稿日期:
  • 最后修改日期:
  • 录用日期:
  • 在线发布日期: 2014-09-25
  • 出版日期: