This paper experimentally investigated the temperature characteristics of Love wave devices on ST 90°-X quartz/SU-8 structure. The electrode width controlled single phase unidirectional distributed transducer (EWC / SPUDT) technique was used for the device design and the 150 MHz SH-SAW delay line devices with Al metallization were fabricated with single mode feature and low insertion loss. Series of Love wave devices were developed using SU 8 guiding layer. Since the SU 8 guiding layer and ST-90°-X-quartz have complementary temperature coefficient of frequency (TCF), the thickness of SU 8 film significantly affects the temperature characteristics of Love wave devices. The experimental results showed that the non linear temperature characteristics of Love wave devices, and TCF was observed and the temperature coefficient of frequency (TCF) was about 0.830×10-6/℃ with the film thickness of 0.95 μm from temperature of 60 ℃ to 80 ℃. The proposed Love wave devices showed a good prospect for physical or chemical sensors in the high temperature using the Love wave device developed in this paper.