BaBi10B6O25掺杂对CaZrO3陶瓷介电性能的影响
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河南省国际科技合作计划基金资助项目(0346620012);河南省科技发展计划基金资助项目(092300410135)

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Effect of BaBi10B6O25 Doping on Dielectric Properties of CaZrO3 Microwave Dielectric Ceramics
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    摘要:

    研究了BaBi10B6O25掺杂量对CaZrO3陶瓷烧结性能、物相组成、介电性能和微观组织形貌的影响。结果表明,通过掺杂BaBi10B6O25,可使CaZrO3陶瓷的烧结温度由1 500 ℃降至1 000 ℃,且无第二相生成,相对密度达98%。当w(BaBi10B6O25)=7.5%时,CaZrO3陶瓷在1 000 ℃烧结3 h获得良好的介电性能:介电常数εr=28,品质因数与频率之积Q·f=8 872 GHz,频率温度系数τf=21×10-6/℃。

    Abstract:

    Taking BaBi10B6O25 as the liquid phase sintering assistants,the effects of BaBi10B6O25 doping on the sintering, phase compositions,microstructure morphology and dielectric properties of CaZrO3 ceramics were investigated. The result indicated that BaBi10B6O25 could be used as sintering assistants to reduce the sintering temperature of CaZrO3 ceramics from 1 500 ℃ to 1 000 ℃ without second phase formation. When the mass fraction of BaBi10B6O25 was 7.5%, a high relative density of 98% and good dielectric properties of εr=28,Q·f=8 872 GHz,τf=21×10-6/℃ were obtained for the CaZrO3 ceramics sintered at 1 000 ℃ for 3 h.

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孙换,李谦,黄金亮,顾永军. BaBi10B6O25掺杂对CaZrO3陶瓷介电性能的影响[J].压电与声光,2015,37(2):271-273. SUN Huan, LI Qian, HUANG Jinliang, GU Yongjun. Effect of BaBi10B6O25 Doping on Dielectric Properties of CaZrO3 Microwave Dielectric Ceramics[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2015-03-30
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