退火工艺对YIG多晶薄膜铁磁共振线宽的影响
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国家自然科学基金资助项目(61021061,5127203,51002021,61131005);国际合作基金资助项目(2012DFR 10730,2013HH0003 and 2012CB933104, 111project No.B13042)

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The Effect of Annealing Process on FMR Linewidth of YIG Films Prepared by RF Magnetron Sputtering
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    摘要:

    主要研究了退火工艺对钇铁石榴石(YIG)薄膜铁磁共振线宽的影响。实验中微米级的YIG薄膜通过磁控溅射法在Gd3Ga5O12(GGG)(111)衬底上制备,并通过750~950 ℃常压常规退火及750~850 ℃真空快速退火两种方式对薄膜进行退火晶化处理。最终系统地研究了薄膜的微观晶体结构、磁性能和铁磁共振线宽性能。研究发现,经过800 ℃,10 min的真空快速热处理的YIG薄膜磁性能优异,其铁磁共振线宽为2 626.1 A/m@9.3 GHz,阻尼系数α=2.077×10-3,薄膜表面粗糙度为1.9 nm。

    Abstract:

    The effect of annealing process on FMR linewidth of YIG films are studied in this paper. The micrometerthick yttrium iron garnet (YIG) films have been prepared on Gd3Ga5O12(GGG)(111) substrate by radio frequency (RF) magnetron sputtering method, and then crystallized by post annealing (750950 ℃) with common thermal annealing)and rapid thermal annealing (750-850 ℃ ) two different methods. The microstructure, the magnetic properties and the ferromagnetic resonance (FMR) properties have been investigated in detail. High quality YIG film have been obtained with RTA method in vacuum and the annealing temperature is 800 ℃.The most narrow FMR linewidths (ΔH) is 2 626.1 A/m at 9.3 GHz, the damping constant α is 2.077×10-3 and the surface roughness of the film is 1.9 nm.

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金曙晨,杨青慧,梅兵,饶毅恒,田晓洁,张怀武.退火工艺对YIG多晶薄膜铁磁共振线宽的影响[J].压电与声光,2015,37(6):1053-1056. JIN Shuchen, YANG Qinghui, MEI Bing, RAO Yiheng, TIAN Xiaojie, ZHANG Huaiwu. The Effect of Annealing Process on FMR Linewidth of YIG Films Prepared by RF Magnetron Sputtering[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2015-12-16
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