In order to suppress the lateral mode resonance of the film bulk acoustic wave resonator(FBAR), the 2D and 3D finite element models of FBARs were established in this work.The vibration displacement distributions at the central frequency and the frequency response curves of resonators with different resonator electrode structures were analyzed by frequency response simulation. The effects of different electrode structures on the parasitic vibration of the resonators were evaluated. And the lateral mode resonances were suppressed by optimizing the structure of resonator electrode. Based on the simulation results, a film bulk acoustic wave resonator with operating frequency of 1.873 GHz, insertion loss of 0.7 dB was designed and manufactured. The FBAR had no evident spurious resonance and the proposed design was verified.