Two kinds of PZT(lead zirconate titanate, r(Zr)/r(Ti)=52/48) and PT(lead titanate) precursors was prepared by using the same process. Multilayer thin films with three different structures of PZT, PT/PZTPZT/PT and PT/PZT//PZT/PT were deposited on Pt/Ti/SiO2/Si substrates by SolGel method. We tested the thin film’s structure, crystal orientation, dielectric constant, dielectric loss, voltagecapacitance curve and ferroelectric properties by using FESEM, XRD. The results show that PT/PZT//PZT/PT multilayer thin film has a high infrared detection rate and the residual polarization, a smaller dielectric loss and a powerful potential applications than the other two kinds of films.