Al掺杂对ZnO纳米结构阵列的影响
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国家教育部重点基金资助项目(2012031);辽宁省自然科学基金资助项目(2015020215);辽宁省高校优秀人才计划基金资助项目(LJQ2015050);辽宁省高等学校创新团队基金资助项目(LT2013014)

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Effect of Al Doping on ZnO Nanosheets Array
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    摘要:

    采用脉冲电磁场辅助水热合成法制备了高比表面积、高能面暴露的ZnO纳米片阵列,通过场发射扫描电镜(FESEM)、X线衍射(XRD)及X线光电子能谱(XPS)等手段测试纳米结构阵列的性能。结果表明,经过Al掺杂后的ZnO纳米结构由棒状转变为六边形的片状结构,当Al的摩尔分数为1%时,纳米片彼此交错,组织均匀,垂直于衬底,与传统纳米棒相比,纳米片具有更大的比表面积及更多暴露的高能晶面,并对纳米棒向纳米片的转变机理进行了详细的分析和探讨。

    Abstract:

    The Al doped ZnO nanosheet arrays with high surface area and high energy surface exposure had been prepared by hydrothermal methods assisted with pulsed electromagnetic field (PEMF). The properties of Al doped ZnO nanosheet arrays were studied by FESEM, XRD, and XPS. The results showed that the ZnO nanostructure was transformed from the rodlike to the hexagonal flake after Al doping. When the Mole fraction of Al was 1%, the ZnO nanosheets was interlaced with each other regularly and grown on the substrate. Comparing with the conventional nanorod, the ZnO nanosheets have greater surface area and higher energy surface exposure. Furthermore, the formation mechanism of nanosheet was analyzed and discussed in detail.

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赵斌, 唐立丹, 王冰. Al掺杂对ZnO纳米结构阵列的影响[J].压电与声光,2017,39(2):256-259. ZHAO Bin, TANG Lidan, WANG Bing. Effect of Al Doping on ZnO Nanosheets Array[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2017-04-01
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