To reduce the influence of the change in Young’s modulus with changes in temperature and thermal stress on the temperature drift of a resonant pressure sensor, a low-temperature-sensitivity resonant pressure sensor based on a Si-SiO₂ composite H-shaped resonant beam and double resonator structure was designed. The finite element simulation software COMSOL was used to simulate the sensor, and the results showed that the sensitivity of the sensor could reach 21.146 Hz/kPa in the range of 0-350 kPa, and the zero temperature drift in the range of -50 ℃ to +125 ℃ was as low as 0.2 Hz/℃. Compared with anall-silicon structure, the sensitivity temperature drift was reduced from 339×10^-6/℃ to 14.1×10^-6/℃, which could be adapted to anenvironment with a high operating temperature range.