Considering the new requirements for multiple frequencies and high integration in RF front-end devicesfor future mobile communication, this study examines a novel laterally excited Lamb wave resonator that exhibitsboth SAW and FBAR technical characteristics.The structure design, parameter optimization, and preparation methodfor a C-band laterally excited bulk acoustic resonator (XBAR) based on a c-axis optimally oriented aluminum nitridepiezoelectric film are proposed, and the process is validated.Two XBAR samples with spurious mitigation werefabricated using lift-off and ICP-RIE, achieving a resonant frequency of 4.464 GHz, a quality factor of 3 039, andan f×Q product of 1.56×1013 GHz in a footprint smaller than 0.12 mm2 .The application potential of the preparedresonators in an RF filter was simulated and analyzed.This study provides an effective design and process technologysupport for the further development of multi-frequency and highly integrated miniaturized filter modules.