Silicon-on-insulator high-temperature pressure sensors can operate at temperatures above 125 °C due

to their unique properties.Generally, the resistance forming the Wheatstone bridge is located solely in the pressuresensitive

region to enhance its sensitivity.However, during its operation, a certain height difference exists between

the resistance of the heavily doped region of the pressure sensor device and its connection with the metal lead.The

thermal stress in this area increases under high-temperature conditions during pressurization and electrification.Metal

leads cannot meet the high-temperature requirements and may break or fail due to overheating.Therefore, this

study investigated a silicon lead technology that had the same layer height as a varistor.A metal lead was laid flat on

this silicon lead, and the end was annealed to form a robust ohmic contact.Experimental testing demonstrated that

this method could ensure the normal operation of the pressure sensor in a high-temperature environment of 300 °C.

The metal lead was well connected to the resistance zone.The stress in the sensitive area of the sensor was reduced

by nearly 50%, and the optimized sensor sensitivity met the design requirements