High performance thin-film SAW filters demands strict requirements for the cleanliness of the bonding surface of the prepared piezoelectric single-crystal thin-film wafer. Currently, the most commonly used conventional cleaning technology do not efficiently remove pollutants, which generates residual particles after ion implantation, thus resulting in numerous bubbles or voids on the bonded wafers. In this study, the conventional cleaning technolo gy is improved. A two-step cleaning process using a sulfuric peroxide mixture for cleaning and a brushing technique using a new composite cleaning solution is proposed in this study. After performing the two-step cleaning process, the number of particles on the surface of the wafer reduced from 148 000 to 23, pollutants such as dirt and particles on the bonding surface are effectively removed, and the quality of the bonded wafers improved significantly. The de veloped cleaning technology has been applied to prepare piezoelectric LTOI single-crystal thin-film wafer materials.