CeO2掺杂TiO2基压敏陶瓷的性能研究
作者:
作者单位:

作者简介:

通讯作者:

基金项目:

国家高技术研究发展计划(“八六三”计划)基金资助项目(2013AA031803)

伦理声明:



Performance Study of CeO2 Doped TiO2 based Varistor Ceramics
Author:
Ethical statement:

Affiliation:

Funding:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
    摘要:

    该文在TiO2压敏陶瓷中掺杂CeO2,研究了烧结温度和CeO2掺杂量对TiO2基压敏陶瓷的电学性能的影响。结果表明,烧结温度为1 400 ℃、CeO2掺杂摩尔分数为1.0%时,TiO2基压敏陶瓷表现出较好的综合电学性能:压敏电压为7.7 V/mm,非线性系数为3.8,漏电流为0.1 A,且具有优的介电常数和介电损耗。

    Abstract:

    The effects of the sintering temperature and doping amount of TiO2 on the electrical performance of TiO2 based caristor ceramics have been investigated in this paper.The results show that the prepared TiO2 based varisor ceramics have good comprehensive electrical performance at sintering temperature of 1 400 ℃ and 1.0% mol of CeO2 doping, its varistor voltage is 7.7 V/mm,nonlinear coefficient is 3.8,the leakage current is 0.1 A,and also has excellent dielectric constant and dielectric loss.

    参考文献
    相似文献
    引证文献
引用本文

樊少忠,钟黎声,陈哲,李亚平. CeO2掺杂TiO2基压敏陶瓷的性能研究[J].压电与声光,2015,37(2):287-290. FAN Shaozhong, ZHONG Lisheng, CHEN Zhe, LI Yaping. Performance Study of CeO2 Doped TiO2 based Varistor Ceramics[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
历史
  • 收稿日期:
  • 最后修改日期:
  • 录用日期:
  • 在线发布日期: 2015-03-30
  • 出版日期: