不同纯度Ni2O3对PNN-PZT压电陶瓷制备的影响
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贵州省工业攻关基金资助项目(黔科合GY 字[2013]3075);东北大学与中国振华集团移动站联合博士后基金资助子项目

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The Influence of Ni2O3 with Different Purity on the Preparation of PNNPZT Piezoelectric Ceramics Material
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    摘要:

    通过氧化粉末固相烧结法制备Pb(Ni1/3Nb2/3)x(ZryTiz)(1-x)O3(PNNPZT)压电陶瓷。通过X射线衍射仪(XRD)及扫描电镜(SEM)对陶瓷的相组成及显微组织进行相关分析。实验结果发现,当其他实验条件完全相同时,分别用不同纯度的Ni2O3药品A和B制备出的陶瓷具有明显的性能差异。使用Ni2O3药品A制备的陶瓷的电学性能较佳,其压电常数d33 =680 pC/ N,机电耦合系数kp =0.62,εr=7 200,介电损耗tan δ=0.023;而使用Ni2O3药品B制备的陶瓷样品的电学性能较差,其d33=430 pC/ N,kp=0.50,εr=8 530, tan δ=0.054。

    Abstract:

    The Pb(Ni1/3Nb2/3)x(ZryTiz)1-xO3(PNNPZT) ceramics samples are prepared through a mixed oxide powder solidstated method. The Xray diffraction(XRD) and scanning electron microscopy(SEM) were adopted to investigate the crystallographic phase and microstructure. The experimental results show that when the other experiment conditions were the same, the electric properties of the PNNPZT samples prepared by two different purities chemicals Ni2O3 A and B have an obvious difference, the ceramics prepared with Ni2O3 chemical A have an optimum electrical properties as follows: piezoelectric constant d33=680 pC/N,electromechanical coupling coefficient kp=0.62,εr=7 200,dielectric loss tan δ=0.023.But the ceramics prepared with the Ni2O3 chemical B have a poor electric properties as follows:d33=430 pC/ N,kp=0.50,εr=8 530,tan δ=0.054.

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彭贵贵,郑德一,胡顺敏.不同纯度Ni2O3对PNN-PZT压电陶瓷制备的影响[J].压电与声光,2016,38(4):663-666. PENG Guigui, ZHENG Deyi, HU Shunmin. The Influence of Ni2O3 with Different Purity on the Preparation of PNNPZT Piezoelectric Ceramics Material[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2016-08-03
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